![Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers: Journal of Applied Physics: Vol 130, No 17 Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers: Journal of Applied Physics: Vol 130, No 17](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/5.0069567&id=images/medium/5.0069567.figures.online.highlight_f1.jpg)
Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers: Journal of Applied Physics: Vol 130, No 17
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Micromachines | Free Full-Text | Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells
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Figure 1 from GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power Under Continuous-Wave Operation | Semantic Scholar
Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chips | ACS Applied Electronic Materials
Schematic cross-section of gallium nitride (GaN)-based epitaxial wafer... | Download Scientific Diagram
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Thermal analysis of GaN-based laser diode mini-array<xref rid="cpb_27_9_094208_fn1" ref-type="fn">*</xref><fn id="cpb_27_9_094208_fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos ...
Picosecond tunable gain-switched blue pulses from GaN laser diodes with nanosecond current injections
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